PART |
Description |
Maker |
EN2101E 2SA150712 EN2101 |
Bipolar Transistor, (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML 160V / 1.5A Switching Applications
|
ON Semiconductor Sanyo Semicon Device
|
2SC3117 2SA1249 2SC3117T 2SC3117S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五(巴西)总裁| 1.5AI(丙)|26 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 160V/1.5A Switching Applications
|
Sanyo Semicon Device
|
2SC2921 |
POWER TRANSISTORS(15A,160V,150W)
|
MOSPEC[Mospec Semiconductor]
|
DXT5551P5-1011 DXT5551P5-15 |
160V NPN HIGH VOLTAGE TRANSISTOR 160V NPN HIGH VOLTAGE TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
2SC3902 2SA1507 2SA150710 |
160V / 1.5A Switching Applications
|
Sanyo Semicon Device
|
2SC3116 2SA1248 |
160V/700mA Switching Applications
|
SANYO[Sanyo Semicon Device]
|
2SC5511 |
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
|
Rohm
|
1N5277C |
Diode Zener Single 160V 2% 500mW 2-Pin DO-35
|
New Jersey Semiconductors
|
2SA1075 2SA1076 |
160V PNP silicon general purpose high speed power transistor SILICON HIGH SPEED POWER TRANSISTOR
|
FUJITSU[Fujitsu Media Devices Limited] Fujitsu Microelectronics
|
2SA1214 |
Trans GP BJT PNP 160V 15A 3-Pin MT-200
|
New Jersey Semiconductor
|
2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|